specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone +15036159000 ? fax: +15036158900 ? email: infosales@tqs.com ? web site: www.triquint.com page 1 of 5 august 2011 ecg001b ingap hbt gain block product features ? dc C 6 ghz ? +12.5 dbm p1db at 1 ghz ? +25 dbm oip3 at 1 ghz ? 22 db gain at 1 ghz ? 3.4 db noise figure ? available in leadfree / green sot89 pkg style ? internally matched to 50 applications ? mobile infrastructure ? catv / fttx ? wlan / ism ? rfid ? wimax / wibro product description the ecg001b is a generalpurpose buffer amplifier t hat offers high dynamic range in a lowcost surfacemou nt package. at 1000 mhz, the ecg001b typically provide s 22 db of gain, +25 dbm output ip3, and +12.5 dbm p1 db. the ecg001b consists of darlington pair amplifiers using the high reliability ingap/gaas hbt process technol ogy and only requires dcblocking capacitors, a bias re sistor, and an inductive rf choke for operation. the devic e is ideal for wireless applications and is available in a low cost, surfacemountable leadfree/green/rohscompli ant sot89 package. all devices are 100% rf and dc tes ted. the broadband mmic amplifier can be directly applie d to various current and next generation wireless techno logies such as gprs, gsm, cdma, and wcdma. in addition, the ecg001b will work for other various application s within the dc to 6 ghz frequency range such as catv and mobile wireless. functional diagram rf in gnd rf out gnd 1 2 3 4 function pin no. input 1 output/bias 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz dc 6000 test frequency mhz 1000 gain db 22.2 output p1db dbm +12.5 output ip3 (2) dbm +25 test frequency mhz 2000 gain db 20.45 21.2 21.95 input return loss db 35 output return loss db 18 output p1db dbm +12.5 output ip3 (2) dbm +23 +26 noise figure db 3.4 4 device voltage v 3.0 3.4 3.8 device current ma 30 1. test conditions unless otherwise noted: 25 oc, supply voltage = +5 v, rbias = 51 , 50 system. 2. 3oip measured with two tones at an output power of C1 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to c alculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature 55 to +150 c device current 150 ma rf input power (continuous) +12 dbm junction temperature +160 c thermal resistance 167 c/w operation of this device above any of these paramet ers may cause permanent damage. typical performance (1) parameter units typical frequency mhz 500 900 1900 2140 s21 db 22.6 22.4 21.4 21.0 s11 db 46 42 35 29 s22 db 29 24 18 17 output p1db dbm +12 +12.5 +12.5 +12.5 output ip3 (2) dbm +23 +25 +26 +26 noise figure db 3.4 3.4 3.4 3.4 ordering information part no. description ecg001bg ingap hbt gain block (leadfree/green/rohscompliant sot89 package) standard t/r size = 1000 pieces on a 7 reel. not recommended for new designs recommended replacement parts: ag303-63g
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone +15036159000 ? fax: +15036158900 ? email: infosales@tqs.com ? web site: www.triquint.com page 2 of 5 august 2011 ecg001b ingap hbt gain block typical device rf performance supply bias = +5 v, r bias = 51 , i cc = 30 ma frequency mhz 100 500 900 1900 2140 2400 3500 5800 s21 db 22.8 22.6 22.4 21.4 21.0 20.7 19.2 16.1 s11 db 48 46 42 35 29 28 22 14 s22 db 34 29 24 18 17 16 13 8 output p1db dbm +11.6 +11.6 +12.6 +12.6 +12.6 +12.8 +12.2 +11 output ip3 dbm +23.6 +23.5 +24.8 +26 +25.6 +25.4 +2 3 noise figure db 3.4 3.4 3.4 3.4 3.4 3.4 1. test conditions: t = 25o c, supply voltage = +5 v, device voltage = +3.4 v, rbias = 51 , icc = 30 ma typical, 50 system. 2. 3oip measured with two tones at an output power of 1 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to calculate th e 3oip using a 2:1 rule. 3. data is shown as device performance only. actu al implementation for the desired frequency band wi ll be determined by external components shown in th e application circuit. gain 14 16 18 20 22 24 0 1 2 3 4 5 6 frequency (ghz) g a in ( d b ) return loss 40 30 20 10 0 0 1 2 3 4 5 6 frequency (ghz) s 1 1 , s 2 2 (d b ) s11 s22 icc vs. vde 0 20 40 60 80 100 3.2 3.3 3.4 3.5 3.6 vde (v) ic c ( m a ) oip3 vs. frequency 20 22 24 26 28 500 1000 1500 2000 2500 3000 frequency (mhz) oip3 (dbm) +25c 40c +85c noise figure vs. frequency 0 1 2 3 4 5 500 1000 1500 2000 2500 3000 frequency (mhz) n f ( d b ) p1db vs. frequency 6 8 10 12 14 16 18 500 1000 1500 2000 2500 3000 frequency (mhz) p1db (dbm) +25c 40c +85c
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone +15036159000 ? fax: +15036158900 ? email: infosales@tqs.com ? web site: www.triquint.com page 3 of 5 august 2011 ecg001b ingap hbt gain block recommended application circuit ecg001b-pcb recommended component values reference frequency (mhz) designator 50 500 900 1900 2200 2500 3500 l1 820 nh 220 nh 68 nh 27 nh 22 nh 18 nh 15 nh c1, c2, c4 .018 f 1000 pf 100 pf 68 pf 68 pf 56 pf 39 pf 1. the proper values for the components are depend ent upon the intended frequency of operation. 2. the following values are contained on the evalu ation board to achieve optimal broadband performanc e: ref. desig. value / type size l1 39 nh wirewound inductor 0603 c1, c2 56 pf chip capacitor 0603 c3 0.018 f chip capacitor 0603 c4 do not place r4 51 1% tolerance 0805 recommended bias resistor values supply voltage r1 value size 5 v 53.3 ohms 0805 6 v 86.7 ohms 0805 8 v 153 ohms 1210 9 v 187 ohms 1210 10 v 220 ohms 2010 12 v 287 ohms 2010 the proper value for r1 is dependent upon the suppl y voltage and allows for bias stability over temperat ure. wj recommends a minimum supply bias of +5 v. a 1% tolerance resistor is recommended. c1 blocking capacitor rf out l1 rf choke c3 0.018 f r4 b ias resistor rf in c4 bypass capacitor c2 blocking capacitor vcc icc = 30 ma ecg001b
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone +15036159000 ? fax: +15036158900 ? email: infosales@tqs.com ? web site: www.triquint.com page 4 of 5 august 2011 ecg001b ingap hbt gain block ecg001b-g mechanical information this package is leadfree/green/rohscompliant. th e plating material on the leads is nipdau. it is c ompatible with both leadfree (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. outline drawing land pattern product marking the component will be marked with an e001g designator with an alphanumeric lot code on the top surface of the package. the obsolete tinlead package is marked with an e001 designator followed by an alphanumeric lot code; it may also have been marked with a b designator followed by a 3 digit numeric lot code. tape and reel specifications for this part are located on the website in the application notes section. msl / esd rating esd rating: class 1a value: passes between 250 and 500v test: human body model (hbm) standard: jedec standard jesd22a114 msl rating: level 3 at +260 c convection reflow standard: jedec standard jstd020 mounting config. notes 1. ground / thermal vias are critical for the prope r performance of this device. vias should use a .35mm (#80 / .0135) dia meter drill and have a final plated thru diameter of .25 mm (.010) . 2. add as much copper as possible to inner and oute r layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fa sten the board to a heatsink. ensure that the ground / thermal via reg ion contacts the heatsink. 4. do not put solder mask on the backside of the p c board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board materi al and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). ang les are in degrees. e001g
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone +15036159000 ? fax: +15036158900 ? email: infosales@tqs.com ? web site: www.triquint.com page 5 of 5 august 2011 ecg001b ingap hbt gain block typical device s-parameters sparameters (v device = +3.4 v, i cc = 30 ma, t = 25 c, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 51.06 78.50 22.77 177.87 24.25 0.35 34.47 14.76 500 45.85 105.39 22.61 158.52 23.97 2.11 28.80 88.38 1000 41.11 132.48 22.25 137.66 23.88 7.72 23.2 0 124.85 1500 35.04 155.82 21.78 117.56 23.47 11.71 19. 45 147.22 2000 32.25 149.35 21.22 98.36 23.29 15.07 17.3 1 176.10 2500 27.68 161.65 20.56 80.02 22.64 22.26 15.75 160.80 3000 25.13 146.56 19.94 62.40 22.19 28.01 14.33 143.60 3500 22.38 130.02 19.24 44.75 21.46 36.02 12.76 119.33 4000 20.32 112.40 18.52 27.97 21.48 45.09 12.00 102.25 4500 17.95 95.14 17.91 10.80 21.10 54.41 10.35 83.68 5000 14.93 76.82 17.08 5.29 20.43 62.18 9.12 6 7.46 5500 14.55 61.65 16.46 20.95 20.18 74.36 8.97 52.66 6000 12.63 48.56 15.70 37.55 19.59 85.56 7.38 34.72 device sparameters are available for download off of the website at: http://www.triquint.com
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